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Comprehensive Semiconductor Science and Technology, Six-Volume Set

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Comprehensive Semiconductor Science and Technology, Six-Volume Set
Author: Pallab Bhattacharya, Roberto Fornari and Hiroshi Kamimura
ISBN 978-0-444-53143-8

Published: Mar 2011

Approx. 3608 pages

Hardcover, Reference

Price: $2200.00 + S&H
  • Summary
  • Table of Contents
  • Author(s)
  • Related Publications
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world.

The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us.

Key Features

  • Provides a comprehensive global picture of the semiconductor world 
  • Each of the work's three sections presents a complete description of one aspect of the whole
  • Written and Edited by a truly international team of experts

Electrons in semiconductors: Empirical and ab initio theories

Ab initio theories of the structural, electronic and optical properties of semiconductors: bulk crystals to nanostructures

Impurity Bands in Group-IV Semiconductors

Integer Quantum Hall Effect

Composite fermion theory of the fractional quantum Hall effect

Ballistic Transport in GaAs/AlGaAs Heterostructures

Spin-Hall effect: Theoretical

Thermal conduction / thermoelectric power

Electronic structures of Quantum Dots

Control over single electron spins in quantum dots

Atomic structures and electronic properties of semiconductor interfaces

Contact hyperfine interactions in semiconductor heterostructures

Optical properties of semiconductors

Bloch oscillation and ultrafast coherent optical phenomena

Optical properties of Si semiconductor nanocrystals

Excitons and polaritons in semiconductors

Magneto-spectroscopy of semiconductors

Microcavities of semiconductor quantum structures

Semimagnetic semiconductors

Electronic states and properties of carbon crystalline from graphene to carbon nanotubes

Angle-Resolved Photoemission Spectroscopy of Graphen, Graphite, and Related Compounds

Theory of Superconductivity in Graphite Intercalation Compounds

Crystal Growth: an Overview

Molecular Beam Epitaxy: An Overview

Bulk Growth of Crystals of III-V Compound Semiconductors

New Developments in Czochralski Silicon

Growth of CdZnTe Bulk Crystal

Growth of bulk SiC with Low Defect Densities and SiC epitaxy

Growth of Bulk GaN Crystals

Growth of bulk A1N Crystals

Growth of Bulk ZnO

Organometallic Vapor Phase Growth of Group III Nitrides

ZnO epitaxial growth

Nanostructures of metal oxides

Growth of Low Dimensional Semiconductors Structures

Integration of Dissimilar Materials

Ion Implantation in Group III Nitrides

Contacts to Wide Band Gap Semiconductors

Formation of Ultra-shallow Junctions

New High-K Materials for C-MOS Applications

Ferroelectric thin layers

Amorphous chalcogenides

Scanning tunneling microscopy and spectroscopy of semiconductor materials

Study of Semiconductors by High Resolution Microscopy and Aberration Corrected Microscopy

Assessment of semiconductors by Scanning Electron Microscopy Techniques

Characterization of Semiconductors by X-Ray Diffraction and Topography

Electronic Energy Levels in Group III Nitrides

Organic Semiconductors

SiGe/Si Heterojunction Bipolar Transistors and Circuits

Si MOSFETs for VLSI: Scaling Issues and Limits

High Electron Mobility Transistors and Their Applications

High-Frequency and High-Speed InP-Based Heterojunction Bipolar Transistors

Negative Differential Resistance Devices and Circuits

High-Frequency Nitride-Based Field Effect Transistors

Wide band Gap Semiconductor Power Devices

Single Electron Transistors and Their Applications

Molecular Electronics

Electronic and Optoelectronic Properties and Applications of Carbon Nanotubes

Flexible Electronics

MEMS Based Sensors

Avalanche Photodiodes

Optoelectronic Devices and Their Integration By Disordering

Quantum Well Lasers and Their Applications

Quantum Cascade Lasers

Slow Light Devices and Applications

Short Wavelength Light Sources

Nitride-Based LEDs and Superluminescent LEDs

ZnO Based Materials and Devices

MCT Materials and Detectors

Quantum Well Infrared Detectors

Type II Superlattice Detectors

Terahertz Detection Devices

Amorphous and Nanocrystal Silicon Solar Cells

Quantum Dot Lasers: Physics and Applications

High-Performance Quantum Dot Lasers

Quantum Dot Infrared Photodetectors

Photonic Crystal Microcavity Light Sources

Photonic Crystal Waveguides and Filters

Spintronic Devices

Spin-Based Semiconductor Heterostructure Devices

Spin-Polarized Transport and Spintronic Devices

Pallab Bhattacharya,  College of Engineering, University of Michigan, USA.; Roberto Fornari, Institute of Physics, humboldt University, Berlin, Germany. and Hiroshi Kamimura, Department of Applied Physics, Tokyo University of Science, Japan.

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